Fundamentals of Modern VLSI Devices, 2/e (IE-Paperback)

Yuan Taur

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商品描述

●Two new chapters cover read and write operations of commonly used SRAM, DRAM and non-volatile memory arrays, in addition to silicon-on-insulator (SOI) devices
●18 useful appendices discuss topics such as spatial variation of quasi-Fermi potentials and power gain of a two-port network
●New homework exercises at the end of every chapter engage students with real-life problems and test their understanding

 

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

商品描述(中文翻譯)

● 兩個新章節介紹了常用的SRAM、DRAM和非揮發性記憶體陣列的讀寫操作,以及絕緣體上硅(SOI)器件。
● 18個有用的附錄討論了類費米位能的空間變化和雙端口網絡的功率增益等主題。
● 每章末尾新增了新的家庭作業練習,讓學生面對實際問題並測試他們的理解能力。

學習現代VLSI器件的基本特性和設計,以及影響性能的因素,請參考這本全面更新的第二版。第一版已被許多美國主要大學和全球各地廣泛採用為微電子學的標準教科書。國際知名的作者們強調了各種實際重要器件參數之間的複雜相互依賴和微妙的權衡,並深入討論了CMOS和雙極器件的尺寸縮放和縮放限制。提供的方程式和參數持續與矽數據進行驗證,使本書在實際晶體管設計和課堂教學中同樣有用。每一章都已更新,包括最新的發展,如MOSFET尺寸理論、高場載子傳輸模型和SiGe基雙極器件。