Mosfet Modeling for VLSI Simulation: Theory & Practice (Hardcover)

The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

這本書討論了從基本半導體理論中推導出的金屬氧化物半導體場效應電晶體（MOSFET）模型。書中發展了各種模型，從簡單到更複雜的模型，考慮到當今（1993年）MOS VLSI技術中使用的亞微米晶體管中觀察到的新物理效應。強調了推導模型所使用的假設，以便清楚理解模型在描述器件特性方面的準確性。由於設計可靠電路的重要性，本書還涵蓋了器件可靠性模型。在設計最先進的MOS IC電路時，理解這些模型是必不可少的。