CMOS/BiCMOS ULSI: Low Voltage, Low Power

Kiat-Seng Yeo, Samir S. Rofail, Wang-Ling Goh

  • 出版商: Prentice Hall
  • 出版日期: 2001-12-27
  • 售價: $1,045
  • 語言: 英文
  • 頁數: 624
  • 裝訂: Hardcover
  • ISBN: 0130321621
  • ISBN-13: 9780130321626
  • 相關分類: CMOS
  • 下單後立即進貨 (約5~7天)

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Summary

For upper level and graduate level Electrical and Computer Engineering courses in Integrated Circuit Design as well as professional circuit designers, engineers and researchers working in portable wireless communications hardware.

This book presents the fundamentals of Complementary Metal Oxide Semiconductor (CMOS) and Bipolar compatible Complementary Metal Oxide Semiconductor (BiCMOS) technology, as well as the latest technological advances in the field. It discusses the concepts and techniques of new integrated circuit design for building high performance and low power circuits and systems for current and future very-large-scale-integration (VLSI) and giga-scale-integration (GSI) applications. CMOS/BiCMOS ULSI: Low-Voltage Low-Power is an essential resource for every professional moving toward lower voltage, lower power, and higher performance VLSI circuits and subsystems design.  

Table of Contents

Acknowledgments.
Nomenclature.
Preface.
1. Introduction.

Low-Power Design: An Overview. Low-Voltage, Low-Power Design Limitations. Silicon-On-Insulator (SOI). From Devices to Circuits.


2. MOS/BiCMOS Process Technology and Integration.

The Realization of BiCMOS Processes. BiCMOS Manufacturing and Integration Considerations. Isolation in BiCMOS. Integrated Analog/Digital BiCMOS Process. Deep Submicron Processes. Low-Voltage/Low-Power CMOS/BiCMOS Processes. Future Trends and Directions of CMOS/BiCMOS Processes. Conclusions.


3. Device Behavior and Modeling.

The MOS(FET) Transistor. The Bipolar (Junction) Transistor. The Bipolar (Junction) Transistor. MOSFET SPICE Models. Advanced MOSFET Models. Advanced MOSFET Models. Bipolar SPICE Models. Bipolar SPICE Models. Bipolar SPICE Models. The MOSFET in a Hybrid-Mode Environment. Summary.


4. Low-Voltage, Low-Power Logic Circuits.

Conventional CMOS Logic Gates. Conventional BiCMOS Logic Gate. BiCMOS Circuits Utilizing Lateral pnp BJTs in pMOS Structures. Merged BiCMOS Digital Circuits. Full-Swing Multidrain/Multicollector Complementary BiCMOS Buffers. Quasi-Complementary BiCMOS Digital Circuits. Full-Swing BiCMOS/BiNMOS Digital Circuits Employing Schottky Diodes. Feedback-Type BiCMOS Digital Circuits. High-Beta BiCMOS Digital Circuits. Transiently Saturated Full-Swing BiCMOS Digital Circuits. Transiently Saturated Full-Swing BiCMOS Digital Circuits. Bootstrapped-Type BiCMOS Digital Circuits. ESD-Free BiCMOS Digital Circuit. Conclusion.


5. Low-Power Latches and Flip-Flops.

Evolution of Latches and Flip-Flops. Quality Measures for Latches and Flip-Flops. Latches and Flip-Flops: A Design Perspective.


A. Basic Equations.

Current Equations. Charge Equations. Noise Equations. Parameter Scaling (Geometrical scaling and temperature scaling).


B. Model Equations.

DC Current Model. Charge Model. Noise Model.


C. Hyperbolic (HYP) Functions.
D. JUNCAP Model.

Temperature, Geometry, and Voltage Dependence. JUNCAP?Capacitor and Leakage Current Model.


Index.
About the Authors.

商品描述(中文翻譯)

 


摘要



本書適用於高級和研究生級別的電氣和計算機工程課程,以及從事便攜式無線通信硬件設計的專業電路設計師、工程師和研究人員。本書介紹了互補金屬氧化物半導體(CMOS)和雙極互補金屬氧化物半導體(BiCMOS)技術的基礎,以及該領域的最新技術進展。它討論了新集成電路設計的概念和技術,用於構建高性能和低功耗電路和系統,以滿足當前和未來的大規模集成(VLSI)和超大規模集成(GSI)應用需求。《CMOS/BiCMOS ULSI: 低電壓低功耗》是每個專業人士朝著低電壓、低功耗和高性能VLSI電路和子系統設計的必備資源。



目錄



致謝。術語。前言。1. 簡介。低功耗設計:概述。低電壓、低功耗設計的限制。絕緣體上的矽(SOI)。從器件到電路。2. MOS/BiCMOS製程技術和集成。BiCMOS製程的實現。BiCMOS製造和集成考慮因素。BiCMOS中的絕緣。集成模擬/數字BiCMOS製程。深亞微米製程。低電壓/低功耗CMOS/BiCMOS製程。CMOS/BiCMOS製程的未來趨勢和方向。結論。3. 器件行為和建模。MOS(場效電晶體)晶體管。雙極(接面)晶體管。MOSFET SPICE模型。先進的MOSFET模型。雙極SPICE模型。MOSFET在混合模式環境中的應用。總結。4. 低電壓、低功耗邏輯電路。傳統CMOS邏輯閘。傳統BiCMOS邏輯閘。利用pMOS結構中的側向pnp BJTs的BiCMOS電路。合併的BiCMOS數字電路。全擺幅多排/多集電極互補BiCMOS緩衝器。準互補BiCMOS數字電路。利用肖特基二極管的全擺幅BiCMOS/BiNMOS數字電路。反饋型BiCMOS數字電路。高β值BiCMOS數字電路。瞬態飽和全擺幅BiCMOS數字電路。靜態飽和全擺幅BiCMOS數字電路。引導型BiCMOS數字電路。無靜電放電的BiCMOS數字電路。結論。5. 低功耗鎖存器和觸發器。鎖存器和觸發器的演變。鎖存器和觸發器的質量指標。鎖存器和觸發器:設計觀點。A. 基本方程。電流方程。電荷方程。噪聲方程。參數縮放(幾何縮放和溫度縮放)。B. 模型方程。直流電流模型。電荷模型。噪聲模型。C. 雙曲線(HYP)函數。D. JUNCAP模型。溫度、幾何和電壓依賴性。JUNCAP電容器和漏電流模型。索引。關於作者。