Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications (Hardcover)

Jacopo Franco, Ben Kaczer, Guido Groeseneken

  • 出版商: Springer
  • 出版日期: 2013-10-29
  • 售價: $3,600
  • 貴賓價: 9.5$3,420
  • 語言: 英文
  • 頁數: 187
  • 裝訂: Hardcover
  • ISBN: 9400776624
  • ISBN-13: 9789400776623
  • 相關分類: CMOS
  • 立即出貨 (庫存=1)

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商品描述

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.

The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

商品描述(中文翻譯)

由於CMOS裝置中的電場不斷增加,可靠性成為進一步縮小技術節點的阻礙因素。儘管已有幾個團隊展示了具有極度縮小的等效氧化物厚度(EOT)至5Å的功能性矽通道裝置,但由於嚴重的負偏壓溫度不穩定性,無法再保證10年可靠的裝置運作。

本書專注於新型(Si)Ge通道量子井pMOSFET技術的可靠性。由於其在載流子遷移率和裝置閾值電壓調節方面的優勢,該技術被考慮用於下一代CMOS技術節點的可能實施。我們觀察到,它還為裝置可靠性優化提供了一定的自由度。通過適當調節裝置閘極結構,我們展示了在操作條件下具有足夠可靠性的超薄EOT裝置,其壽命可達10年。

在此提供的大量實驗數據集是在各種處理過的300mm晶圓上收集的,並展示了可靠性改善與製程和架構無關,因此可以輕易地適用於先進的器件架構,如三閘(finFET)器件。我們提出了一個物理模型來理解由基於鍺通道和SiO2/HfO2介電層組成的MOS系統的固有優越可靠性。

這裡討論的改進可靠性特性強烈支持(Si)Ge技術作為未來CMOS技術節點的明確領先者。