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本專著研究用於類腦芯片的仿生人工突觸憶阻器，分別針對類腦芯片神經形態材料表征、制備和憶阻特性研究。內容分為五章，第一章 緒論，第二章 PBD: GO納米復合物憶阻器制備、表征及其憶阻特性研究，第三章 PMMA: GO納米復合物憶阻器制備、表征及其憶阻特性研究，第四章 MOF: GO納米復合物憶阻器制備、表征及其憶阻特性研究，第五章 GO: GQDs納米復合物憶阻器制備、表征及其憶阻特性研究。本書為神經形態計算與憶阻器類腦芯片領域的系統性研究成果凝練，旨在為相關領域的研究者與工程實踐者提供重要參考。
目錄大綱
Contents
Chapter 1 Introduction···························································1
1.1 Memristor ···································································1
1.1.1 What Is The Memristor ··········································.1
1.1.2 How to Fabricate Memristors ···································.3
1.1.3 What Is The Memristive Characteristic ·························5
1.1.4 What Is The Operational Mechanism for Memristors ·········6
1.2 Biomimic Artificial Devices ············································.9
1.2.1 What Is The Biomimic Artificial Device ······················.9
1.2.2 How to Confront The Issue and Infinite Probability ·······.11
1.2.3 Memristor Is A Current and Future Promise for Biomimic
Artificial Synapse Device ·····································.13
Chapter 2 Memristor Fabrication, Characterization, and Properties
Research Based on PBD: GO Nanocomposites ········.16
2.1 Memristor Fabrication on The Basis of PBD: GO Nanocomposites ·.16
2.2 Characterization of PBD: GO Nanocomposites ·····················.18
2.2.1 TEM Characterization ··········································.19
2.2.2 SEM Characterization ··········································.20
2.2.3 TGA-DTG Analysis ············································.22
2.2.4 FTIR Spectrum ··················································.23
2.2.5 Raman Spectrum ················································.24
2.2.6 XRD Characterization ··········································.26
2.2.7 Fluorescent Spectrum ··········································.27
2.3 Memristive Characteristics Based on PBD: GO Nanocomposites ···.29
2.3.1 Effect of Chemical Composition on Memristive
Characteristics···················································.30
2.3.2 Cycle-to-Cycle Endurance ·····································.32
2.3.3 Device-to-Device Uniformity ·································.34
2.3.4 Retention Ability ···············································.35
2.3.5 Operational Mechanism ········································.36
2.4 Memristor Fabrication Based on Trilayer-Structure PBD:
GO/PMMA/PBD: GO ···················································.40
2.5 Characterization of PBD: GO Nanocomposite and PMMA········.42
2.5.1 SEM Characterization ··········································.42
2.5.2 TEM Characterization ··········································.43
2.5.3 TGA-DTG Analysis ············································.44
2.5.4 UV-Visible Absorption and Fluorescent Spectrum ·········.46
2.6 Better Memristive Characteristics of ITO/PBD: GO/PMMA/PBD:
GO/Ni·····································································.49
2.6.1 Effect of Chemical Component Weight on Memristive
Characteristics···················································.49
2.6.2 Cycle-to-Cycle Endurance ·····································.50
2.6.3 Retention Ability ···············································.51
2.6.4 Device-to-Device Uniformity ·································.52
2.6.5 Operational Mechanism ········································.54
Chapter 3 Memristor Fabrication, Characterization, and Characteristics
Research Based on PMMA: GO Nanocomposites·····.59
3.1 Memristor Fabrication Based on PMMA: GO Nanocomposites ··.59
3.2 Characterization of PMMA: GO Nanocomposites ··················.61
3.2.1 SEM Characterization ··········································.61
3.2.2 FTIR Spectrum ··················································.63
3.2.3 TEM Characterization ··········································.64
3.2.4 XRD Characterization ··········································.64
3.2.5 UV-Visible Absorption Spectrum ·····························.66
3.2.6 Fluorescent Spectrum ··········································.67
3.3 Memristive Characteristics Based on PMMA: GO Nanocomposites ··.68
3.3.1 Effect of Chemical Component Weight Ratio on Memristive
Characteristics···················································.69
3.3.2 Cycle-to-Cycle Endurance ·····································.71
3.3.3 Retention Ability ···············································.72
3.3.4 Operation Mechanism ··········································.73
Chapter 4 Memristor Fabrication, Characterization, and Characteristics
Based on Mg-MOF-74: GO Nanocomposites ···········.77
4.1 Memristor Fabrication Based on Mg-MOF-74: GO Nanocomposites ·.77
4.2 Characterization of Mg-MOF-74: GO Nanocomposites ···········.80
4.2.1 SEM Characterization ··········································.80
4.2.2 FTIR Spectrum ··················································.81
4.2.3 TEM Characterization ··········································.83
4.2.4 XRD Characterization ··········································.83
4.2.5 Raman Spectrum ················································.85
4.2.6 Thermal Analysis ···············································.86
4.3 Memristive Characteristics Based on Mg-MOF-74: GO
Nanocomposites ························································.89
4.3.1 Effect of Chemical Component Weight Ratio on Memristive
Characteristics···················································.90
4.3.2 Cycle-to-Cycle Endurance ·····································.92
4.3.3 Retention Ability ···············································.96
4.3.4 Operational Mechanism ········································.97
Chapter 5 Memristor Fabrication, Characterization, and Memristive
Characteristic Based on GO: GQDs Nanocomposites ··.100
5.1 Memristor Fabrication Based on GO: GQDs Nanocomposites···.101
5.2 Characterization of GO: GQDs Nanocomposites ··················.103
5.2.1 SEM Characterization ·········································.103
5.2.2 FTIR Spectrum ·················································.104
5.2.3 TEM Characterization ·········································.106
5.2.4 Raman Spectrum ···············································.107
5.2.5 TGA-DTG Analysis ···········································.108
5.3 Memristive Characteristics Based on GO: GQDs Nanocomposites ··.109
5.3.1 Effect of Chemical Component Weight Ratio on Memristive
Characteristics··················································.109
5.3.2 Cycle-to-Cycle Endurance ····································.111
5.3.3 Device-to-Device Uniformity ································.115
5.3.4 Retention Ability ··············································.115
5.3.5 Operational Mechanism ·······································.116
Conclusion ·····································································120
References ·····································································122
