矽基集成芯片製造工藝原理

自1958年集成電路誕生以來，矽基集成芯片製造技術迅速發展，現今已經進入亞5nm時代。
矽基芯片製造技術可以概括為一系列微細加工矽片技術，這些愈益精密的微細加工技術持續創新與升級，
源於20世紀初以來現代物理等物質科學知識的長期積累。
充分了解各種微細加工技術背後的科學原理，是理解和掌握集成芯片製造工藝技術的基礎。
 全書共20章。前8章概述矽基集成芯片從小規模到極大規模集成的創新演進路徑，分析集成芯片製造技術快速升級換代的獨特規律，
研判器件微小型化技術與摩爾規律的內在聯繫，並對半導體物理和晶體管原理基礎理論知識作概要討論。
後12章分別闡述熱氧化、矽單晶與外延生長及SOI晶片、精密圖形光刻、擴散摻雜、
離子注入與快速退火、PVD與CVD及ALD薄膜澱積、高密度等離子體刻蝕、金屬矽化物自對準接觸和多層金屬互連等多種集成芯片微細加工關鍵技術，
著力分析討論各種微細加工技術的物理、化學基礎原理與規律，
其間對製造工藝中廣泛應用的真空技術與等離子體技術作概要介紹。
本書特別關注進入21世紀以來正在發展的集成芯片製造技術的新結構、新材料、
新工藝和新趨勢，介紹包括高密度超微立體晶體管和納米CMOS等集成器件的典型結構與製造工藝。
  Abstract     This book focuses on the Si micro-fabrication technology. Since the invention of integrated circuits (IC) in 1958, 
the Si micro-fabrication technology has been developing rapidly thanks to the advances in modern physics and other fundamental sciences from the beginning of the 20th century. 
Fully understanding the scientific principles underlying the various micro-fabrication technologies is the basis for studying and mastering the Si IC chip process technology.
  This book consists of 20 chapters. The first 8 chapters outline the evolution and innovation of the CMOS and bipolar IC process technology over the past six decades, 
analyze the unique law of Si IC micro-fabrication technology evolution, discuss the relationship between the scaling-down principle and the Moore's Law, 
and review the basic theories of semiconductor physics and transistors. 
The following 12 chapters elaborate on such key process technologies of Si IC chips as thermal oxidation, 
Si epitaxial growth and SOI material, lithography, dopant diffusion, ion implant and RTA, 
PVD/CVD/ALD thin films, high density plasma etching, salicide contact and multi-level interconnection. 
The physical and chemical principles underlying the micro-fabrication technology are analyzed and discussed for better understanding. 
Besides, more attention is paid to the fabrication technology of nano-CMOS chips with new structures and materials.