Semiconductor Device Physics and Simulation (Hardcover)

J.S. Yuan, Juin Jei Liou

  • 出版商: Kluwer Academic Publ
  • 出版日期: 1998-05-31
  • 售價: $980
  • 貴賓價: 9.8$960
  • 語言: 英文
  • 頁數: 336
  • 裝訂: Hardcover
  • ISBN: 0814406327
  • ISBN-13: 9780306457241
  • 相關分類: 半導體物理學 Physics
  • 下單後立即進貨 (約5~7天)

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商品描述

This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results. Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis. Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated. Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design

Contents

Introduction. P-N Junction. Bipolar Junction Transistors. Junction Field-Effect Transistors. Metal-Oxide-Semiconductor Field-Effect Transistors. BiCMOS Devices. Metal-Semiconductor Field-Effect Transistors. Heterojunction Bipolar Transistors. Photoconductive Diodes. Index.

商品描述(中文翻譯)

本書全面介紹了現代半導體器件,包括異質結和同質結器件,並使用二維模擬器(MEDICI)進行分析和生成模擬結果。每個器件都從直流、交流和瞬態模擬結果、相關器件物理和設計分析的角度進行了詳細探討。本書使用了244個有用的圖示來說明所模擬器件的物理機制和特性。《半導體器件物理與模擬》全面而有序,是從器件物理到實際器件設計的理想橋樑。

目錄:
- 簡介
- P-N結
- 雙極性接面電晶體
- 接面場效應電晶體
- 金屬-氧化物-半導體場效應電晶體
- BiCMOS器件
- 金屬-半導體場效應電晶體
- 異質結雙極性電晶體
- 光導二極體
- 索引