Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, 4/e (Hardcover)
暫譯: 量子井、量子線與量子點:半導體奈米結構的理論與計算物理學,第4版(精裝本)

Paul Harrison, Alex Valavanis

  • 出版商: Wiley
  • 出版日期: 2016-06-13
  • 售價: $1,760
  • 貴賓價: 9.8$1,725
  • 語言: 英文
  • 頁數: 624
  • 裝訂: Hardcover
  • ISBN: 1118923367
  • ISBN-13: 9781118923368
  • 相關分類: 半導體物理學 Physics量子 Quantum
  • 下單後立即進貨 (約5~7天)

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商品描述

Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies.

This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including:

  • Properties of non-parabolic energy bands
  • Matrix solutions of the Poisson and Schrödinger equations
  • Critical thickness of strained materials
  • Carrier scattering by interface roughness, alloy disorder and impurities
  • Density matrix transport modelling
  • Thermal modelling

Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is presented in a lucid style with easy to follow steps, illustrative examples and questions and computational problems in each chapter to help the reader build solid foundations of understanding to a level where they can initiate their own theoretical investigations. Suitable for postgraduate students of semiconductor and condensed matter physics, the book is essential to all those researching in academic and industrial laboratories worldwide.

Instructors can contact the authors directly (p.harrison@shu.ac.uk / a.valavanis@leeds.ac.uk) for Solutions to the problems.

商品描述(中文翻譯)

《量子井、量子線與量子點》提供了所有必要的理論和計算資訊,以幫助讀者理解這些半導體納米結構的電子、光學和傳輸特性。本書將通過全面的解釋和數學推導,引導讀者到達能夠設計具有所需電子和光學特性的半導體納米結構的程度,以便在這些技術中加以利用。

這本經過全面修訂和更新的第四版包含了新章節,融入了現代技術和大量新材料,包括:

- 非拋物能帶的特性
- 泊松方程和薛丁格方程的矩陣解
- 受拉伸材料的臨界厚度
- 由界面粗糙度、合金無序和雜質引起的載流子散射
- 密度矩陣傳輸建模
- 熱建模

本書由半導體納米結構和量子光電學領域的知名作者撰寫,採用清晰易懂的風格,提供易於跟隨的步驟、示例以及每章的問題和計算題,幫助讀者建立堅實的理解基礎,達到能夠開始自己的理論研究的水平。適合半導體和凝聚態物理的研究生,本書對於全球學術和工業實驗室的研究人員來說都是必不可少的。

教師可以直接聯繫作者(p.harrison@shu.ac.uk / a.valavanis@leeds.ac.uk)以獲取問題的解答。