Advanced Nanoscale Mosfet Architectures: Current Trends and Future Perspectives
Biswas, Kalyan, Sarkar, Angsuman
- 出版商: Wiley
- 出版日期: 2024-06-12
- 售價: $4,580
- 貴賓價: 9.5 折 $4,351
- 語言: 英文
- 頁數: 336
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1394188943
- ISBN-13: 9781394188949
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商品描述
Comprehensive reference on the fundamental principles and basic physics dictating metal-oxide-semiconductor field-effect transistor (MOSFET) operation
Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal-oxide-semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.
The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.
Additional topics covered include:
- High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification
- Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon-germanium (SiGe) FinFET and its challenges and future perspectives
- TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications
- Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications
Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
商品描述(中文翻譯)
《先進奈米級金屬氧化物半導體場效電晶體結構》是一本全面介紹金屬氧化物半導體場效電晶體(MOSFET)操作基本原理和基礎物理的參考書籍。
《先進奈米級MOSFET結構》詳細回顧了現代金屬氧化物半導體場效電晶體(MOSFET)器件技術和進展,包括其操作、各種結構、製造、材料、建模和模擬方法、電路應用等與奈米級MOSFET技術相關的各個方面。
本書首先介紹了基礎技術,然後描述了奈米級器件縮放所面臨的挑戰。其他涵蓋的主題包括器件物理和操作、高度縮放MOSFET的應變工程、隧道場效電晶體、基於石墨烯的場效電晶體等。本書還比較了矽基材料和器件、奈米片電晶體,並介紹了使用先進MOSFET的低功耗電路設計。
其他涵蓋的主題還包括:
- 多閘MOSFET的高介電常數閘極介質和金屬閘極電極,包括閘極堆疊處理和金屬閘極修改
- 三維互補金屬氧化物半導體(CMOS)的應變工程及其縮放影響,以及矽鍺(SiGe)FinFET的應變工程、挑戰和未來展望
- 多閘MOSFET的TCAD模擬,包括模型校準和模擬模型在模擬類比和射頻應用中的性能
- 使用數位CMOS技術的SCL設計超低功耗VLSI應用的類比放大器電路
《先進奈米級MOSFET結構》幫助讀者理解器件物理和新結構、材料組成的設計,是從事該領域研究的研究人員和專業人士以及相關專業學生的重要資源。
作者簡介
Kalyan Biswas, PhD, is an Assistant Professor in the ECE Department at MCKV Institute of Engineering in Liluah, Howrah, WB, India.
Angsuman Sarkar, PhD, is a Professor in the ECE Department of the Kalyani Government Engineering College in Kalyani, Nadia, WB, India. He is a co-editor of the Wiley title Optical Switching: Device Technology and Applications in Networks (2022).
作者簡介(中文翻譯)
Kalyan Biswas博士是印度西孟加拉邦Howrah的MCKV工程學院電子與通訊工程系的助理教授。
Angsuman Sarkar博士是印度西孟加拉邦Nadia的Kalyani政府工程學院電子與通訊工程系的教授。他是Wiley出版社的書籍《Optical Switching: Device Technology and Applications in Networks》(2022年)的共同編輯。