III-Nitride Devices and Nanoengineering

Zhe Chuan Feng

商品描述

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.

Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.

This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Contents: High Pressure Bulk Crystal Growth of (Ga,Al)N (P Geiser et al.); Fabrication of GaN Light Emitting Diodes by Laser-Off Technique (C-F Chu et al.); High-Resolution Electron Microscopy Observations of GaN-Based Laser Diodes (M Shiojiri); Growth and Development of III-Nitride Photodetectors (U Chowdhury et al.); Laser Diodes Grown on Bulk GaN Substrate (P Perlin et al.); III-Nitride Lighting Emitting Diodes on Si (N C Chen & C F Shih); III-Nitride Light-Emitting Devices on Patterned Sapphire Substrates (D S Wuu et al.); Recent Trends in Indium Nitride Nanomaterials (A Ganguly et al.); and other papers.

商品描述(中文翻譯)

基於GaN和相關材料的奈米級科學和技術裝置在近年來取得了巨大的發展。新的基於GaN的裝置,如紫外線探測器、快速p-HEMT和微波裝置,比其他半導體材料製成的裝置更為優越。

本書的評論章節由知名專家撰寫,涵蓋了近年來最重要的主題和成就,討論了不同團體取得的進展,並提出了未來的方向。每個章節還描述了理論和實驗的基礎。

本書對於裝置設計和加工工程師、材料生長和評估人員、研究生和科學家以及GaN領域的新手來說是一個寶貴的資源。

目錄包括:(Ga,Al)N的高壓块狀晶體生長(P Geiser等人);激光去除技術製作GaN發光二極管(C-F Chu等人);基於GaN的激光二極管的高分辨率電子顯微鏡觀察(M Shiojiri);III族氮化物光探測器的生長和發展(U Chowdhury等人);在块狀GaN基板上生長的激光二極管(P Perlin等人);在矽上的III族氮化物發光二極管(N C Chen和C F Shih);在圖案化藍寶石基板上的III族氮化物發光器件(D S Wuu等人);銦氮化物納米材料的最新趨勢(A Ganguly等人)等等。