Lateral Power Transistors in Integrated Circuits (Power Systems)
暫譯: 集成電路中的橫向功率晶體管(電力系統)
Tobias Erlbacher
- 出版商: Springer
- 出版日期: 2014-10-24
- 售價: $4,510
- 貴賓價: 9.5 折 $4,285
- 語言: 英文
- 頁數: 223
- 裝訂: Hardcover
- ISBN: 3319004999
- ISBN-13: 9783319004990
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商品描述
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications.
In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced.
The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices.
In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
商品描述(中文翻譯)
本書總結並比較了在電力電子應用中,針對集成電路開發新型橫向功率晶體管(LDMOS 裝置)的最新進展。
在第一部分,本書通過自上而下的方法說明了橫向功率晶體管的必要性:首先,介紹了現代工業、汽車和消費電子產品中的典型能量轉換應用。接著,介紹了適合這些應用的常見電路拓撲,並討論了單片集成的可行性。最後,說明了在單一晶片上結合功率和邏輯功能的必要性,並推導出功率半導體裝置的要求和限制。
第二部分描述了過去幾十年橫向功率晶體管的演變,從簡單的針型概念到雙作用的 RESURF 拓撲。它描述了這些 LDMOS 裝置的操作原理,並討論了橫向功率裝置的限制。此外,還提出了可以用來評估本書中描述的新型橫向功率晶體管相對於 LDMOS 裝置性能的性能指標。
在最後一部分,[..] 討論了包括電荷補償和溝槽閘拓撲在內的基本物理概念。同時,還介紹了在碳化矽上 LDMOS 裝置的研究現狀。總結了這些集成方法的優缺點,並評估了其在電力電子應用中的可行性。