Semiconductor Power Devices: Physics, Characteristics, Reliability (Hardcover) (書角有凹損)

Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker

  • 出版商: Springer
  • 出版日期: 2011-01-27
  • 售價: $1,700
  • 貴賓價: 9.8$1,666
  • 語言: 英文
  • 頁數: 536
  • 裝訂: Hardcover
  • ISBN: 3642111246
  • ISBN-13: 9783642111242
  • 相關分類: 半導體物理學 Physics
  • 立即出貨(限量) (庫存=1)

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商品描述

<內容簡介>

Describes the structure, characteristics and technical features of a specific power device
Discusses detailed physics of the devices
Examines the effects of Emitters

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Table Of Contents

Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn - Junctions.- Short introduction to power device technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device Induced Oscillations and Electromagnetic Disturbances.- Power Electronic Systems.- Appendix.- Index.

商品描述(中文翻譯)

內容簡介:

本書描述了特定功率元件的結構、特性和技術特點。詳細討論了元件的物理特性。檢視了發射極的影響。

半導體功率元件是功率電子學的核心。它們決定了功率轉換器的性能,並允許高效率的拓撲結構。深入討論了半導體特性、pn-接面以及理解功率元件的物理現象。詳細解釋了最先進的功率二極管、可控硅、MOSFET和IGBT的工作原理,以及半導體元件生產技術的關鍵方面。在實踐中,不僅半導體,還有封裝和互連技術的熱和機械特性對於預測元件在電路中的行為至關重要。確定了磨損和老化機制,並發展了可靠性分析原則。提供了關於破壞性機制的獨特信息,包括典型的故障圖片,以評估功率元件的耐用性。同時還討論了元件引起的寄生效應,如電磁干擾問題。本書最後介紹了現代功率電子系統集成技術和趨勢。

目錄:

- 功率半導體元件 - 高效電能轉換系統的關鍵組件
- 半導體特性
- pn-接面
- 功率元件技術簡介
- pin-二極管
- 肖特基二極管
- 雙極性晶體管
- 可控硅
- MOS晶體管
- IGBT
- 功率元件的封裝和可靠性
- 功率元件的破壞性機制
- 功率元件引起的振蕩和電磁干擾
- 功率電子系統
- 附錄
- 索引