Semiconductor Power Devices: Physics, Characteristics, Reliability (Hardcover) (書角有凹損)
暫譯: 半導體功率元件:物理、特性、可靠性 (精裝版) (書角有凹損)

Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker

  • 出版商: Springer
  • 出版日期: 2011-01-27
  • 售價: $1,700
  • 貴賓價: 9.8$1,666
  • 語言: 英文
  • 頁數: 536
  • 裝訂: Hardcover
  • ISBN: 3642111246
  • ISBN-13: 9783642111242
  • 相關分類: 半導體物理學 Physics
  • 立即出貨(限量) (庫存=1)

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商品描述

<內容簡介>

Describes the structure, characteristics and technical features of a specific power device
Discusses detailed physics of the devices
Examines the effects of Emitters

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.

Table Of Contents

Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn - Junctions.- Short introduction to power device technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device Induced Oscillations and Electromagnetic Disturbances.- Power Electronic Systems.- Appendix.- Index.

商品描述(中文翻譯)

內容簡介
。描述特定功率元件的結構、特性和技術特徵
。討論元件的詳細物理學
。檢視發射極的影響

半導體功率元件是功率電子學的核心。它們決定了功率轉換器的性能,並允許高效率的拓撲結構。深入探討半導體特性、pn接面及理解功率元件的物理現象。詳細解釋最先進的功率二極體、可控矽、MOSFET和IGBT的工作原理,以及半導體元件生產技術的關鍵方面。在實踐中,不僅半導體,還有封裝和互連技術的熱性能和機械性能對預測元件在電路中的行為至關重要。識別磨損和老化機制,並發展可靠性分析原則。提供有關破壞機制的獨特資訊,包括典型故障圖像,以評估功率元件的堅固性。此外,還討論了如元件引起的電磁干擾問題等寄生效應。本書最後介紹現代功率電子系統集成技術和趨勢。

目錄
功率半導體元件 - 高效電能轉換系統的關鍵組件。- 半導體特性。- pn接面。- 功率元件技術簡介。- pin二極體。- 肖特基二極體。- 雙極性晶體管。- 可控矽。- MOS晶體管。- IGBT。- 功率元件的封裝與可靠性。- 功率元件中的破壞機制。- 功率元件引起的振盪和電磁擾動。- 功率電子系統。- 附錄。- 索引。