Mosfet Modeling for Circuit Analysis And Design (Hardcover)

Description

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.

Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.

Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced. 

Table of Contents

*The MOS Capacitor
*The Long-Channel MOSFET: Theory and dc Equations
*The Real MOS Transistor: dc Models
*Stored Charges and Capacitive Coefficients
*Mismatch Modeling
*Noise in MOSFETs
*High-Frequency Models
*Gate and Bulk Currents
*Advanced MOSFET Structures
*MOSFET Parameter Extraction
*Advanced MOSFET Models for Circuit Simulators

描述

這是第一本專門為下一代MOSFET模型而撰寫的書籍。本書針對電路設計師提供深入的內容，同時也吸引了器件專家的關注，呈現了一種全新的緊湊建模觀點，完全放棄了區域建模方法。

本書提供了構建緊湊MOSFET模型所需的基本物理理論概述，並統一處理了反轉電荷模型和表面電位模型。考慮到數字、模擬和射頻設計師對於簡單方程式在電路設計中的可用性的需求，本書提供了適用於手動分析或自動合成的緊湊表達式，並在所有操作區域中均有效。本書推導了新一代緊湊模型中用於計算機模擬的所有主要表達式。

由於先進技術的設計師越來越關注波動，本書強調了對波動的建模。引入了一種統一的方法，同時考慮了空間（匹配）和時間（噪聲）波動。

目錄

* MOS電容器
* 長通道MOSFET：理論和直流方程式
* 真實MOS晶體管：直流模型
* 儲存電荷和電容係數
* 不匹配建模
* MOSFET的噪聲
* 高頻模型
* 閘極和基極電流
* 先進MOSFET結構
* MOSFET參數提取
* 電路模擬器的先進MOSFET模型