Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability
暫譯: 寬帶隙功率半導體封裝：材料、元件與可靠性

Suganuma, Katsuaki

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability

商品描述

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.

As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.

商品描述(中文翻譯)

《寬帶隙功率半導體封裝：材料、元件與可靠性》探討了寬帶隙（WBG）功率半導體在整合過程中面臨的主要挑戰，包括耐熱性、散熱與熱應力、高頻與離散元件的噪音降低，以及介面、金屬化、電鍍、鍵合和布線等方面的挑戰。該領域的專家們展示了有關WBG功率半導體材料、元件及可靠性評估方法的最新研究，並提出解決方案以促進整合的進展。

由於碳化矽（SiC）和氮化鎵（GaN）作為寬帶隙（WBG）功率半導體，具備高擊穿電壓、高頻率能力及超過200°C的高耐熱性等優異特性，因此本書在此主題上提供了及時的資源。

作者簡介

Dr. Katsuaki Suganama graduated from Tohoku University Faculty of Engineering in 1977, and since then has had a highly influential role within the fields of Physical properties of metals/Metal-base materials, Inorganic industrial materials, Metal making/Resorce production engineering, Material processing/Microstructural control engineering, Structural/Functional materials, Composite materials/Surface and interface engineering, Inorganic materials/Physical properties, Electronic materials/Electric materials.

He has published several academic papers and books during his career, and has won many prestigious awards such as Best Paper of Symposium/Best Paper of Session in the 33rd International Symposium on Microelectronics and the Richard M. Fularth Pacific Award. He has worked as Professor at Osaka University Institute of Scientific and Industrial Research since 1996.

作者簡介(中文翻譯)

菅生勝明博士於1977年畢業於東北大學工程學院，自那時以來，他在金屬的物理性質/金屬基材料、無機工業材料、金屬製造/資源生產工程、材料加工/微觀結構控制工程、結構/功能材料、複合材料/表面與界面工程、無機材料/物理性質、電子材料/電氣材料等領域中扮演了極具影響力的角色。

在他的職業生涯中，他發表了多篇學術論文和書籍，並獲得了許多著名獎項，如第33屆國際微電子研討會的最佳論文獎和Richard M. Fularth太平洋獎。自1996年以來，他一直擔任大阪大學科學與工業研究所的教授。

類似商品