Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield (Hardcover)

Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.  With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power.

This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies.  

• Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques;
• Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;
• Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.

變異性是納米級IC設計中最具挑戰性的障礙之一。在納米技術中，由於低電壓操作要求，SRAM對工藝變異的敏感性增加，而這一要求在追求更高性能和密度的同時，降低功耗和成本的需求更加嚴重。隨著記憶體密度的急劇增加、供應電壓的降低和變異性的增加，統計模擬方法變得必不可少，以估計記憶體產量並優化性能和功耗。

本書是關於強健的SRAM電路和統計設計方法的寶貴參考資料，針對記憶體設計領域的研究人員和實踐工程師。它結合了最先進的電路技術和統計方法，以優化納米技術中的SRAM性能和產量。

本書的特點包括：
- 提供對最先進的、容忍變異性的SRAM電路技術的全面評估；
- 討論與器件相關的工藝變異如何從設計角度影響電路和系統性能；
- 幫助設計師通過實用的統計設計方法和產量估計技術優化記憶體產量。