Robust SRAM Designs and Analysis (Hardcover)

This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.

• Provides a complete and concise introduction to SRAM bitcell design and analysis;
• Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
• Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
• Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

本書提供了一個指南，介紹了靜態隨機存取記憶體（SRAM）位元儲存器的設計和分析，以應對CMOS裝置和新興裝置（如隧道場效電晶體）的納米級挑戰。由於製程變異性是大型記憶體陣列中持續存在的挑戰，本書重點介紹了最受歡迎的SRAM位元儲存器拓撲結構（基準電路），以減輕變異性，並進行了詳盡的分析。書中還包括了實驗模擬設置，涵蓋了SRAM設計和分析中的納米級挑戰，如製程變異性、漏電和NBTI。全書強調了實現最佳SRAM位元儲存器設計的各種權衡考慮。

本書的特點包括：
- 提供了完整而簡潔的SRAM位元儲存器設計和分析介紹；
- 提供應對納米級挑戰的技術，如製程變異性、漏電和NBTI，用於SRAM設計和分析；
- 包括用於提取CMOS技術和新興裝置的不同設計指標的模擬設置；
- 強調實現最佳SRAM位元儲存器設計的不同權衡考慮。