Semiconductor Memory Devices and Circuits (Hardcover)

Yu, Shimeng

  • 出版商: CRC
  • 出版日期: 2022-04-15
  • 售價: $4,500
  • 貴賓價: 9.5$4,275
  • 語言: 英文
  • 頁數: 198
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 0367687070
  • ISBN-13: 9780367687076
  • 相關分類: 半導體
  • 立即出貨 (庫存 < 3)

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商品描述

This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics.

 

 

 

 

 

  • Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor
  • Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array
  • Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array
  • Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET
  • Explores the new applications such as in-memory computing for AI hardware acceleration.

商品描述(中文翻譯)

本書涵蓋了從元件位元儲存結構到記憶體陣列設計的半導體記憶體技術,並強調最近的產業尺寸縮小趨勢和尖端技術。書的第一部分討論了主流的半導體記憶體技術。書的第二部分討論了新興的記憶體候選技術,這些技術可能有潛力改變記憶體層次結構,並調查了記憶體技術在機器/深度學習應用中的新應用。本書適用於電機和電腦工程研究生以及半導體和微電子領域的研究人員或業界專業人士。

- 解釋了基本記憶體位元儲存單元的設計,包括6T SRAM、1T-1C DRAM和浮閘/電荷陷阱快閃記憶體晶體管。
- 檢視了外圍電路的設計,包括感測放大器和記憶體陣列的組織。
- 檢視了記憶體技術的產業趨勢,如基於FinFET的SRAM、高頻寬記憶體(HBM)、3D NAND快閃記憶體和3D X-point陣列。
- 討論了新興記憶體技術的前景和挑戰,如相變記憶體(PCM)、電阻式記憶體(RRAM)、自旋轉磁阻式記憶體(STT-MRAM/SOT-MRAM)和鐵電阻式記憶體(FeRAM/FeFET)。
- 探索了新的應用,如用於人工智慧硬體加速的內存計算。

作者簡介

Shimeng Yu is currently an associate professor of electrical and computer engineering at the Georgia Institute of Technology.

作者簡介(中文翻譯)

Shimeng Yu目前是喬治亞理工學院電機與電腦工程系的副教授。