Semiconductor Processes and Integration (Paperback)
暫譯: 半導體製程與整合 (平裝本)

本書序言

Semiconductor Processes and Integration is a comprehensive textbook thatsystematically covers the fundamental knowledge of semiconductor processing andintegration technologies. The book focuses on multiple generations of transistorarchitectures, including two-dimensional metal-oxide-semiconductor field-effecttransistors (MOSFETs ), three-dimensional fin field-effect transistors (FinFETs ), gateall-around field-effect transistors (GAAFETs ), and complementary field-effecttransistors (CFETs). This book is designed for university-level courses in"Semiconductor Processes" or "Semiconductor Process Technology" within scienceand engineering departments, professional development for semiconductor industrypractitioners, and as a technical reference for researchers and experts in related fields.

The content is organized to provide a progressive understanding of semiconductortechnology, beginning with foundational concepts and advancing to cutting-edgedevelopments. Chapters 1 through 3 establish the fundamental principles by exploringthe basic properties of semiconductor materials, starting from the crystal structure ofsilicon semiconductors and progressing through the physical concepts ofsemiconductor physics with comprehensive explanations of energy bands and analysisof basic semiconductor device operations. Chapters 4 through 9 systematicallyexamine the unit module processes essential to semiconductor integrated circuitfabrication, including oxidation and diffusion processes, photolithography processes,diffusion and ion implantation processes, etching processes, chemical vapor depositionand dielectric films, and metallization processes.

Building upon these foundational topics, the later chapters address processintegration technologies. Chapter 10 addresses process integration for 2D planartransistors, Chapter 11 covering advanced process technologies, and Chapter 12focusing on process integration techniques for 3D FinFETs. Chapter 13 delves intoadvanced semiconductor processes and key material analysis in components, whileChapter 14 concludes by examining future development trends in semiconductorprocessing technology.

This book provides comprehensive coverage of state-of-the-art semiconductortechnologies that have been implemented in mass production since 2010, includingstrained silicon channels, high-k dielectric gate oxide layers, metal gates, device gatedesign considerations, MOSFET carrier mobility, and advanced source and drainengineering. The process of integration technology for the latest mass-produced threedimensionalfin transistors is thoroughly explained through detailed text and illustrative diagrams. Recognizing that material characterization is an indispensableaspect of advanced semiconductor processing, the book includes practical applicationsof key analytical techniques such as scanning electron microscopy (SEM),transmission electron microscopy (TEM), X-ray spectroscopy, and Ramanspectroscopy.

Finally, it offers a comprehensive examination of anticipated semiconductorprocess technology developments, addressing critical topics such as FinFETs reachingtheir physical scaling boundaries, the emergence of GAAFETs as next-generationdevice architectures, CFETs for enhanced integration density, and the evolution of 3DIC heterogeneous integration.

Given the inherent complexity of semiconductor manufacturing processes andtechniques, this book takes a dual approach of comprehensive textual explanationscomplemented by over 500 illustrative figures and diagrams, enabling readers to graspintricate concepts with greater depth and clarity. The content of this book is groundedin two decades of practical teaching and research experience accumulated by ourresearch team at National Tsing Hua University in Taiwan, enriched by insights drawnfrom numerous classic textbooks and hundreds of scientific and technical papers in thefield. We would like to express our sincere gratitude to the members of our laboratoryresearch team for their invaluable assistance in the preparation of this book, to theindustry professionals and academic colleagues whose exchanges and discussionshave greatly enriched our understanding over the years, and to the students who havetaken our courses and provided valuable feedback that has helped shape this work.

For supplementary learning, Professor Yung-Chun Wu's 36-hour open course withEnglish subtitle on Semiconductor Engineering is freely available on YouTube (https://reurl.cc/Kd8pjp). The course can also be found by searching "SemiconductorEngineering" on the YouTube.

Given the rapid pace of advancement in semiconductor technology, inadvertentomissions or inaccuracies in this work are inevitable. We sincerely welcomeconstructive feedback, corrections, and suggestions from experts and readers alike,which may be submitted via email to ycwuess@gmail.com.

本書特色

1.The text offers comprehensive coverage of state-of-the-art semiconductor technologies, including strained silicon channels, high-k dielectric gate oxide layers, metal gates, device gate design considerations, MOSFET carrier mobility, and advanced source and drain engineering.
2.The text provides a detailed explanation of process integration technologies for 2D planar transistors and 3D FinFETs.
3.The text provides the examples that clarify concepts and show how theory is applied.
4.With over 500 illustrations, it enables readers to grasp the complexity of semiconductor manufacturing processes and techniques with greater depth and clarity.
5.The book covers multiple generations of transistor architectures, including MOSFETs, FinFETs, GAAFETs, and CFETs.