Latchup (Hardcover)
暫譯: 鎖存器故障 (精裝版)

Steven H. Voldman

  • 出版商: Wiley
  • 出版日期: 2008-02-01
  • 售價: $5,550
  • 貴賓價: 9.5$5,273
  • 語言: 英文
  • 頁數: 474
  • 裝訂: Hardcover
  • ISBN: 0470016426
  • ISBN-13: 9780470016428
  • 海外代購書籍(需單獨結帳)

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商品描述

Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration.

Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand.

 

This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as:

 

  • latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers,  and buried grids – from single- to triple-well CMOS; 
  • practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha  (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and;
  • examples of  latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design,  to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level.

 

Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology.  Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

商品描述(中文翻譯)

興趣於 latchup 隨著互補金屬氧化物半導體 (CMOS) 技術的演進、金屬氧化物半導體場效應電晶體 (MOSFET) 的縮放以及高階系統單晶片 (SOC) 整合而重新燃起。

對於提供保護以防止 latchup 的清晰方法論,並深入了解相關的物理、技術和電路問題的需求日益增加。

本書描述了 CMOS 和 BiCMOS 半導體技術及其對當前 latchup 現象的敏感性,涵蓋從基本的過電壓和過電流條件、單事件 latchup (SEL) 和電纜放電事件 (CDE),到 latchup 多米諾現象。書中包含專注於雙極子物理學、latchup 理論、latchup 和保護環特徵結構、特徵測試、產品級測試系統、產品級測試和實驗結果的章節。還包括對最先進的半導體製程、設計佈局以及電路級和系統級 latchup 解決方案的討論,以及:

- 從 CMOS 到 BiCMOS 的 latchup 半導體製程解決方案,例如淺溝槽、深溝槽、逆向井、連接植入、次收集器、重摻雜的埋層和埋置網格——從單井到三井 CMOS;
- 實用的 latchup 設計方法、自動化和基準級 latchup 測試方法與技術、latchup 理論的對數電阻空間、廣義的 alpha (a) 空間、beta (b) 空間、新的 latchup 設計方法——將理論與實際分析相連接;
- latchup 電腦輔助設計 (CAD) 方法論的範例,從設計規則檢查 (DRC) 和邏輯到物理設計,到針對內部和外部 latchup 的新 latchup CAD 方法論,涵蓋地方及全球設計層級。

《Latchup》作為作者關於靜電放電 (ESD) 保護系列書籍的伴隨文本,對專業半導體晶片和系統級 ESD 工程師來說是一本寶貴的參考資料。半導體器件、製程和電路設計師,以及質量、可靠性和故障分析工程師將會發現它對現代 CMOS 技術所面臨的問題提供了有益的資訊。汽車和航空航天行業的從業者也會覺得它很有用。此外,其學術處理將吸引對半導體製程、器件物理學、電腦輔助設計和設計整合感興趣的高年級和研究生。