Power Microelectronics: Device and Process Technologies, 2/e (Hardcover)

Yung Chii Liang, Ganesh S Samudra, Chih-Fang Huang

  • 出版商: World Scientific Pub
  • 出版日期: 2017-03-15
  • 售價: $1,960
  • 貴賓價: 9.8$1,921
  • 語言: 英文
  • 頁數: 608
  • 裝訂: Hardcover
  • ISBN: 9813200243
  • ISBN-13: 9789813200241
  • 相關分類: 微電子學 Microelectronics
  • 立即出貨 (庫存=1)

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商品描述

This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

商品描述(中文翻譯)

這本描述性教科書提供了對於理解現代功率半導體器件所需的理論和製程技術的清晰介紹,包括從p-n接面靜電學的基礎知識、單極MOSFET和超結構、雙極IGBT,到最新的寬禁帶SiC和GaN器件。它還涵蓋了相關的半導體製程技術。基於實際製造的器件的真實示例,並對製程步驟進行清晰詳細的描述,尤其有用。這本書適合大學的功率半導體或功率電子器件課程使用。器件設計師和研究人員在他們的工作中也會發現這本書是一個很好的參考,尤其是專注於先進器件開發和設計方面的人。