Dynamic RAM: Technology Advancements (Paperback)
暫譯: 動態隨機存取記憶體:技術進展 (平裝本)

Siddiqi, Muzaffer A.

  • 出版商: CRC
  • 出版日期: 2017-03-29
  • 售價: $4,350
  • 貴賓價: 9.5$4,133
  • 語言: 英文
  • 頁數: 382
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 1138077054
  • ISBN-13: 9781138077058
  • 相關分類: 半導體
  • 立即出貨 (庫存=1)

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商品描述

Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components--access transistor, storage capacitor, and peripherals--DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.

Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

 

 

  • DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
  • Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
  • How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
  • Various types of leakages and power consumption reduction methods in active and sleep mode
  • Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

商品描述(中文翻譯)

因為在大型主機、個人電腦以及行動音視頻設備中的廣泛使用,DRAM(動態隨機存取記憶體)正以越來越高的產量生產,無論是獨立型還是作為系統單晶片的一部分嵌入式形式。由於其組件的最佳設計——存取晶體管、儲存電容器和周邊設備——DRAM目前是最便宜且密度最高的半導體記憶體。因此,大多數DRAM結構的研究與開發都集中在其組成元件及其互連所使用的技術上。然而,關於半導體記憶體的一般書籍不多,而專門針對DRAM的書籍更是稀少。

《動態隨機存取記憶體:技術進展》提供了DRAM技術的整體觀點,系統性地描述了自1970年代以來該領域的進展,以及對未來挑戰的分析。

**主題包括:**

- 各類型的DRAM單元,包括平面型、三維(3-D)溝槽或堆疊型、COB或CUB、垂直型,以及使用先進晶體管和儲存電容器的機械強健型單元
- 用於RCAT、SCAT、FinFET、BT FinFET、鞍型和先進凹槽型的晶體管技術進展,以及儲存電容器的實現
- 如何利用小於100納米的溝槽DRAM技術和小於50納米的堆疊DRAM技術及相關主題可能引領新的研究
- 在活動模式和睡眠模式下各類型的漏電流及降低功耗的方法
- 各類型的SAs(選擇器)和利用ECC(錯誤更正碼)及冗餘的產量提升技術

這本書對於半導體記憶體研究是一個值得的補充,對於有興趣於高密度和成本效益的DRAM設計與優化的學者和研究人員來說,也可能作為研究生課程的一部分而具有實用價值。