Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Hardcover)

Tsunenobu Kimoto, James A. Cooper

  • 出版商: IEEE
  • 出版日期: 2014-11-01
  • 售價: $6,410
  • 貴賓價: 9.5$6,090
  • 語言: 英文
  • 頁數: 400
  • 裝訂: Hardcover
  • ISBN: 1118313526
  • ISBN-13: 9781118313527
  • 海外代購書籍(需單獨結帳)

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商品描述

A comprehensive introduction and up-to-date reference toSiC power semiconductor devices covering topics from materialproperties to applications

Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001.  The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems,particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011,providing rugged, high-efficiency switches for high-frequency powersystems.  In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield.  Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology,theory and analysis of practical devices, and an overview of themost important systems applications.  Specifically includedare:

  • A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques.
  • Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors.
  • A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources.
  • Coverage of special applications, including microwave devices,high-temperature electronics, and rugged sensors.
  • Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development.

This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers,application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.