Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (Hardcover)
Tsunenobu Kimoto, James A. Cooper
- 出版商: IEEE
- 出版日期: 2014-11-01
- 售價: $6,040
- 貴賓價: 9.5 折 $5,738
- 語言: 英文
- 頁數: 400
- 裝訂: Hardcover
- ISBN: 1118313526
- ISBN-13: 9781118313527
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商品描述
A comprehensive introduction and up-to-date reference toSiC power semiconductor devices covering topics from materialproperties to applications
Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001. The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems,particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011,providing rugged, high-efficiency switches for high-frequency powersystems. In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield. Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology,theory and analysis of practical devices, and an overview of themost important systems applications. Specifically includedare:
- A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques.
- Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors.
- A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources.
- Coverage of special applications, including microwave devices,high-temperature electronics, and rugged sensors.
- Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development.
This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers,application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.
商品描述(中文翻譯)
《碳化矽技術基礎》是一本全面介紹碳化矽(SiC)功率半導體裝置的最新參考書,涵蓋從材料特性到應用的各個主題。
基於1980年代和1990年代在SiC材料科學和製造技術方面的多項突破,第一批SiC肖特基障二極體(SBD)於2001年作為商業產品推出。自那時以來,SiC SBD市場顯著增長,SBD現在被廣泛應用於各種電力系統,特別是開關模式電源和馬達控制。SiC功率MOSFET於2011年進入商業生產,為高頻電力系統提供了堅固且高效的開關。在這本廣泛的書籍中,作者利用他們豐富的經驗,提供了SiC材料、裝置和應用的介紹,以及針對在這個快速發展領域工作的科學家和工程師的深入參考。《碳化矽技術基礎》涵蓋了SiC材料的基本特性、加工技術、實用裝置的理論與分析,以及最重要的系統應用概述。具體包括:
- 對SiC材料特性、體晶成長、外延生長、裝置製造技術和表徵技術的完整討論。
- 肖特基二極體、PIN二極體、JBS/MPS二極體、JFET、MOSFET、BJT、IGBT和晶閘管的裝置物理和操作方程。
- 電力電子應用的調查,包括開關模式電源、馬達驅動、電動車的功率轉換器和可再生能源的轉換器。
- 特殊應用的涵蓋,包括微波裝置、高溫電子學和堅固的傳感器。
- 全書插圖豐富,文本由在SiC研究和開發領域擁有超過45年綜合經驗的公認專家撰寫。
本書旨在為研究晶體生長、材料科學和半導體裝置技術的研究生和研究人員提供參考。該書對於設計工程師、應用工程師和產品經理在電源、轉換器和逆變器設計、電動車技術、高溫電子學、傳感器和智慧電網技術等領域也非常有用。