Physics of Semiconductor Devices, 4/e (Hardcover)

Sze, Simon M., Li, Yiming, Ng, Kwok K.

Physics of Semiconductor Devices, 4/e (Hardcover)
  • 出版商: Wiley
  • 出版日期: 2021-03-03
  • 定價: $1,780
  • 售價: 9.8 折 $1,744
  • 語言: 英文
  • 頁數: 944
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 1119429110
  • ISBN-13: 9781119429111
  • 相關分類: 半導體、物理學 Physics

    • 立即出貨 (庫存 < 3)

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商品描述

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices:

  • Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
  • Offers completely updated and revised information that reflects advances in device concepts, performance, and application
  • Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy
  • Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual
  • Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

商品描述(中文翻譯)

《半導體器件物理學》第四版是對主要的雙極、單極、特殊微波和光電器件的基本物理和操作特性的標準參考書。本書全面更新和擴充，包括約1,000個原始研究論文和綜述文章的參考文獻，超過650個高質量的技術插圖，以及兩打以上的材料參數表。

本書分為五個部分，首先概述了半導體的性質，包括能帶、載流子濃度和載流子傳輸性質。第二部分介紹了半導體器件的基本組成部分，包括p-n接面、金屬-半導體接觸和金屬-絕緣體-半導體（MIS）電容器。第三部分探討了雙極電晶體、MOSFET（MOS場效電晶體）和其他場效電晶體，如JFET（結型場效電晶體）和MESFET（金屬-半導體場效電晶體）。第四部分專注於負阻和功率器件。本書最後介紹了光子器件和傳感器，包括發光二極管（LED）、太陽能電池以及各種光電探測器和半導體傳感器。作為半導體器件領域的標準教科書和參考書，本書具有以下特點：

- 提供理解當前使用的器件以及評估未來器件性能和限制所需的實用基礎
- 提供完全更新和修訂的信息，反映了器件概念、性能和應用的進展
- 討論當代感興趣的主題，如將光能轉換為電能的光子器件應用
- 包括大量問題集、實際案例、表格、圖片和插圖；幾個有用的附錄；以及詳細的解答手冊
- 探索MODFET、諧振穿隧二極管、量子級聯激光器、單電子電晶體、實空間轉移器件和MOS控制晶閘管等尖端技術的新工作

《半導體器件物理學》第四版是設計工程師、研究科學家、工業和電子工程經理以及該領域的研究生不可或缺的資源。

作者簡介

S. M. SZE, PHD, is Honorary Chair Professor, College of Electrical and Computer Engineering, National Chiao Tung University, Taiwan. He has made fundamental and pioneering contributions to semiconductor devices, particularly his co-discovery of the floating-gate memory (FGM) effect that has ushered in the Fourth Industrial Revolution. Dr. Sze has authored, co-authored, and edited more than 400 papers and 16 books. He is a celebrated Member of IEEE, an Academician of Academia Simica, and a member of the US National Academy of Engineering.

YIMING LI, PHD, is Full Professor of Electrical and Computer Engineering at National Chiao Tung University, Taiwan. He has been a Visiting Professor in Stanford University, Grenoble INP, and Tohoku University. He has published more than 300 technical articles in journals, conferences, and book chapters. Dr. Li is an active member of IEEE and has served on technical committees for many international professional conferences including IEDM. He is the recipient of the Pan Wen-Yuan Foundation's Research Fellowship Award and the Chinese Institute of Electrical Engineering's Outstanding Young Electrical Engineer Award.

KWOK K. NG, PHD, is now serving on the Industry Advisory Board of the ECE Department of Wayne State University, USA, and as Adjunct Professor at National Chiao Tung University, Taiwan. He joined Bell Telephone Laboratories in 1980, and continued in its spin-offs Lucent Technologies and Agere Systems. He was with SRC (Semiconductor Research Corp.) from 2007 to 2019. Dr. Ng is an IEEE Life Fellow and former Editor of IEEE Electron Device Letters. He is author of numerous publications, including the book Complete Guide to Semiconductor Devices.

作者簡介(中文翻譯)

S. M. SZE, PHD 是台灣國立交通大學電機與電腦工程學院的名譽講座教授。他在半導體器件方面做出了基礎性和開創性的貢獻，特別是他共同發現的浮閘記憶體效應（FGM）引領了第四次工業革命。Sze博士撰寫、合著和編輯了400多篇論文和16本書籍。他是IEEE的傑出會員，中央研究院院士，也是美國國家工程院的成員。

YIMING LI, PHD 是台灣國立交通大學電機與電腦工程學院的教授。他曾在斯坦福大學、格勒諾布爾國立工程學院和東北大學擔任訪問教授。他在期刊、會議和專書章節上發表了300多篇技術文章。Li博士是IEEE的活躍成員，並曾在許多國際專業會議的技術委員會上擔任職務。他獲得了潘文淵基金會的研究獎學金和中國電機工程學會的優秀青年電機工程師獎。

KWOK K. NG, PHD 目前在美國韋恩州立大學電機與電腦工程學系的工業顧問委員會任職，並擔任台灣國立交通大學的兼職教授。他於1980年加入貝爾電話實驗室，並在其分支機構Lucent Technologies和Agere Systems繼續工作。他在2007年至2019年期間在半導體研究公司（Semiconductor Research Corp.）工作。Ng博士是IEEE的終身會士，曾任《IEEE電子器件快報》的編輯。他是許多出版物的作者，包括書籍《半導體器件完全指南》。

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